The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2001
Filed:
May. 27, 1997
Applicant:
Inventors:
Arthur Wang, Saratoga, CA (US);
Jein-Chen Young, Milpitas, CA (US);
Ming Kwan, San Leandro, CA (US);
Assignee:
Hyundai Electronics America, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/604 ;
U.S. Cl.
CPC ...
G11C 1/604 ;
Abstract
A semiconductor structure for a flash memory has memory cells which are formed in a first conductivity type well, which in turn is formed within an opposite conductivity type well. The opposite conductivity type well is formed in the substrate. Additional regions within each of the first and opposite conductivity type wells are used to provide electrical connections to the corresponding well. This structure is particularly advantageous because it provides the ability to operate the flash memory with considerably lower operating potentials than prior art flash memories.