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For the Inventor, By the Inventor

Austin, TX, United States of America

Andreas Knorr

This inventor holds 20 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Manufacturing. Top assignees: Infineon Technologies Ag, International Business Machines Corporation, Infineon Technologies North America Corp.. Active years: 2001-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Andreas Knorr. Retrieved from https://idiyas.com/inventor/andreas-knorr-67h8o8tc

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 20

% Patents Active = 40.0


Average Co-Inventor Count = 2.8

ph-index = 10

Forward Citations = 399(Granted Patents)


Location History:

  • Fishkill, NY (US) (2001 - 2004)
  • Austin, TX (US) (2003 - 2009)

Company Filing History:

goldMedal8 out of 15,040 
 
Infineon Technologies Ag
 patents
silverMedal8 out of 166,425 
 
International Business Machines Corporation
 patents
bronzeMedal3 out of 244 
 
Infineon Technologies North America Corp.
 patents
4. 1 out of 30,893 
 
Siemens Aktiengesellschaft
 patents
5. 5 out of 834,601 
Other
 patents
where one patent can have more than one assignee

Years Active: 2001-2009

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Areas of Expertise:
Semiconductor Devices
Plasma Oxidation
Wafer Treatment
Dielectric Materials
Integrated Circuits
Gap Filling
Trench Isolation
DRAM Array
Storage Nodes
Capacitor Structures
Barrier Methods
Polysilicon Fill
20 patents (USPTO):Explore Patents
1. 7626257 - Semiconductor devices and methods of manufacture thereof (2009-12-01),
2. 7273638 - High density plasma oxidation (2007-09-25),
3. 7256148 - Method for treating a wafer edge (2007-08-14),
4. 7157373 - Sidewall sealing of porous dielectric materials (2007-01-02),
5. 7125782 - Air gaps between conductive lines for reduced RC delay of integrated circuits (2006-10-24),
6. 7091103 - TEOS assisted oxide CMP process (2006-08-15),
7. 6946345 - Self-aligned buried strap process using doped HDP oxide (2005-09-20),
8. 6933206 - Trench isolation employing a high aspect ratio trench (2005-08-23),
9. 6914015 - HDP process for high aspect ratio gap filling (2005-07-05),
10. 6890833 - Trench isolation employing a doped oxide trench fill (2005-05-10),
11. 6821865 - Deep isolation trenches (2004-11-23),
12. 6794242 - Extendible process for improved top oxide layer for DRAM array and the gate interconnects while providing self-aligned gate contacts (2004-09-21),
13. 6706634 - Control of separation between transfer gate and storage node in vertical DRAM (2004-03-16),
14. 6667504 - Self-aligned buried strap process using doped HDP oxide (2003-12-23),
15. 6566228 - Trench isolation processes using polysilicon-assisted fill (2003-05-20),

Title: The Innovative Journey of Andreas Knorr

Introduction: Andreas Knorr, a visionary inventor based in Austin, TX, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Andreas Knorr holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: With a background in engineering and a passion for problem-solving, Andreas Knorr has led successful projects that have revolutionized industries and improved the lives of many. His commitment to innovation is evident in the numerous patents he has secured over the years.

Collaborations: Throughout his career, Andreas Knorr has collaborated with leading research institutions, universities, and tech companies to bring his ideas to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Andreas Knorr's relentless pursuit of innovation and his dedication to pushing the boundaries of technology have established him as a prominent figure in the world of inventors. His impact on various industries is profound, and his legacy of groundbreaking inventions will continue to inspire future generations of innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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