The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Dec. 09, 2002
Jochen Beintner, Wappingers Falls, NY (US);
Laertis Economikos, Wappingers Falls, NY (US);
Michael Wise, Lagrangeville, NY (US);
Andreas Knorr, Austin, TX (US);
Jochen Beintner, Wappingers Falls, NY (US);
Laertis Economikos, Wappingers Falls, NY (US);
Michael Wise, Lagrangeville, NY (US);
Andreas Knorr, Austin, TX (US);
International Business Machines Corporation, Armonk, NY (US);
Infineon Technologies North America Corporation, San Jose, CA (US);
Abstract
CMP of integrated circuits containing DRAM arrays with trench capacitors fill the trenches with oxide, resulting in a an array of oxide structures that is dense compared with the concentration in the surrounding support structures and therefore has a higher loading. A conformal layer is deposited over the wafer, increasing the loading in the array, but filling in spaces between active areas. A blanket etch removes material in both the array and the supports. A block etch balances the amount of material in the array and the supports. A supplementary oxide deposition in the array fills spaces between the structures to a nearly uniform density.