The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Oct. 10, 2003
Applicants:
Jochen Beintner, Wappingers Falls, NY (US);
Andreas Knorr, Austin, TX (US);
Inventors:
Jochen Beintner, Wappingers Falls, NY (US);
Andreas Knorr, Austin, TX (US);
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/76 ;
U.S. Cl.
CPC ...
Abstract
An isolation trench formed in a semiconductor substrate and is filled with at least one insulating liner layer that is deposited along sidewalls and a bottom region of the isolation trench and with at least one silicon liner layer that is deposited atop the insulating liner layer. An upper portion of the insulating liner layers are removed, and the silicon liner layers are removed. A remaining portion of the trench is filled with another insulating layer.