The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2007
Filed:
Jan. 07, 2003
Michael Belyansky, Bethel, CT (US);
Oleg Glushenkov, Wappingers Falls, NY (US);
Andreas Knorr, Austin, TX (US);
Michael Belyansky, Bethel, CT (US);
Oleg Glushenkov, Wappingers Falls, NY (US);
Andreas Knorr, Austin, TX (US);
International Business Machines Corp., Armonk, NY (US);
Infineon Technologies, North American Corp., San Jose, CA (US);
Abstract
A method of oxidizing a substrate having area of about 30,000 mmor more. The surface is preferably comprised of silicon-containing materials, such as silicon, silicon germanium, silicon carbide, silicon nitride, and metal suicides. A mixture of oxygen-bearing gas and diluent gas normally non-reactive to oxygen, such as Ne, Ar, Kr, Xe, and/or Rn are ionized to create a plasma having an electron density of at least about 1e12 cmand containing ambient electrons having an average temperature greater than about 1 eV. The substrate surface is oxidized with energetic particles, comprising primarily atomic oxygen, created in the plasma to form an oxide film of substantially uniform thickness. The oxidation of the substrate takes place at a temperature below about 700° C., e.g., between about room temperature, 20° C., and about 500° C.