Company Filing History:

4 out of 927

Globalfoundries U.S. Inc.

patents

3 out of 2,656

Purdue Research Foundation

Years Active: 2020-2024

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11 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11929141 - Sparsity-aware reconfigurable compute-in-memory (CIM) static random access memory (SRAM) (2024-03-12),

2. 11776606 - Sensing scheme for STT-MRAM using low-barrier nanomagnets (2023-10-03),

3. 11341086 - Compute accelerator with 3D data flows (2022-05-24),

4. 11087814 - Sensing scheme for STT-MRAM using low-barrier nanomagnets (2021-08-10),

5. 11056535 - Non-volatile memory element arrays in a wheatstone bridge arrangement (2021-07-06),

6. 10997498 - Apparatus and method for in-memory binary convolution for accelerating deep binary neural networks based on a non-volatile memory structure (2021-05-04),

7. 10825510 - Multi-bit dot product engine (2020-11-03),

8. 10802827 - Memory device having in-situ in-memory stateful vector logic operation (2020-10-13),

9. 10726896 - Resistive nonvolatile memory structure employing a statistical sensing scheme and method (2020-07-28),

10. 10672465 - Neuromorphic memory device (2020-06-02),

11. 10665281 - Resistive nonvolatile memory cells with shared access transistors (2020-05-26),

Certainly! Here is the article about inventor Amogh Agrawal:

Title: Innovator Spotlight: Amogh Agrawal - Revolutionizing Memory Technologies

Introduction:

Amogh Agrawal, a visionary inventor based in West Lafayette, IN (US), has made significant contributions to the field of memory technologies. With a remarkable portfolio of 11 patents, Agrawal continues to push the boundaries of innovation in the realm of static random access memory (SRAM) and magnetic random-access memory (MRAM) systems.

Latest Patents:

1. Sparsity-aware reconfigurable compute-in-memory (CIM) static random access memory (SRAM)

2. Sensing scheme for Spin-Transfer Torque Magnetic Random-Access Memory (STT-MRAM) using low-barrier nanomagnets

Career Highlights:

Having worked at renowned institutions such as Purdue University and GlobalFoundries Inc., Agrawal has honed his expertise in semiconductor design and memory technologies. His latest patents showcase his prowess in developing energy-efficient and high-precision analog-to-digital converters and innovative sensing schemes for MRAM systems.

Collaborations:

Throughout his career, Agrawal has collaborated closely with experts in the field, including Ajey Poovannummoottil Jacob and Bipul C Paul. Together, they have brought forth groundbreaking advancements in memory technologies, paving the way for more efficient and reliable data storage solutions.

Conclusion:

Amogh Agrawal's inventive spirit and dedication to technological advancement have solidified his position as a trailblazer in the field of memory technologies. His pioneering work in reconfigurable memory systems and innovative sensing schemes continues to shape the future of data storage and processing technologies.

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