The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2020
Filed:
Feb. 09, 2019
Purdue Research Foundation, West Lafayette, IN (US);
Akhilesh Ramlaut Jaiswal, West Lafayette, IN (US);
Amogh Agrawal, West Lafayette, IN (US);
Kaushik Roy, West Lafayette, IN (US);
Indranil Chakraborty, West Lafayette, IN (US);
Purdue Research Foundation, West Lafayette, IN (US);
Abstract
A method of obtaining an in-memory vector-based dot product is disclosed, which includes providing a matrix of memory cells having M rows, each memory cell in each row holding a value and having dedicated read transistors Tand T, where Tis controlled by the value held in the associated memory cell and Tis controlled by a row-dedicated source (v) for each row, the combination of the Tand Ttransistors for each cell selectively (i) couple a reference voltage with a column-dedicated read bit line (RBL) for each column for an in-memory vector-based dot product operation or (ii) couple ground with the column-dedicated read bit line (RBL) for each column for a memory read operation, where total resistance of the read transistors (R) for each cell in each row is based on Rmax/2, . . . Rmax, where Rmax is the resistance of the least significant cell in each row.