The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2020

Filed:

Jan. 30, 2019
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ajey Poovannummoottil Jacob, Watervliet, NY (US);

Amogh Agrawal, West Lafayette, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/1659 (2013.01); G11C 13/004 (2013.01); G11C 13/0004 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 2213/79 (2013.01);
Abstract

A memory structure includes a first memory array with two transistor-two variable resistor memory cells and a second memory array with one transistor-one variable resistor memory cells, which are each selectively operable in read, write and standby modes. The first memory array and the second memory array are interleaved so that, when the second memory operates in the read mode, the first memory array automatically and concurrently operates in a reference mode. A method of operating the memory structure includes, when the second memory array operates in the read mode, automatically and concurrently operating the first memory array in the reference mode so that the first memory array generates and outputs a statistical reference voltage, which is between the low and high voltages of a nominal memory cell within the second memory array and which is employed by the second memory array to sense a stored data value.


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