Hsinchu, Taiwan

Amit Kundu

This inventor holds 25 USPTO granted patents and 6 published patent applications, primarily in Semiconductor Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Other. Active years: 2014-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Amit Kundu. Retrieved from https://idiyas.com/inventor/amit-kundu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 

% Patents Active = 80.0

Average Co-Inventor Count = 2.9

ph-index = 3

Forward Citations = 23(Granted Patents)


Company Filing History:


Years Active: 2014-2026

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Areas of Expertise:
Voltage Reference Circuit
Temperature Compensation
Electromigration Evaluation
Low Noise Ring Oscillator
FinFET Integrated Circuits
Parameter PSRR Measurement
Self-Heating
Heat Sink Design
Buried Power Grid
Analog Cells
MOS-Based Circuits
Current Mismatch
25 patents (USPTO):Explore Patents

Title: Amit Kundu - Innovative Inventor from Hsinchu

Introduction: Amit Kundu is a highly skilled inventor based in Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Amit Kundu holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his diverse expertise and forward-thinking approach to invention.

Career Highlights: With a background in engineering and a passion for pushing the boundaries of what is possible, Amit Kundu has had a successful career marked by numerous accolades and achievements in the world of patents and inventions.

Collaborations: Throughout his career, Amit Kundu has collaborated with leading tech companies, research institutions, and universities to bring his innovative ideas to life and make a lasting impact on the industry.

Conclusion: Amit Kundu's dedication to innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology in Hsinchu and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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