The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

Feb. 10, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Amit Kundu, Hsinchu, TW;

Jaw-Juinn Horng, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 49/02 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 27/0207 (2013.01); H01L 27/0886 (2013.01); H01L 28/20 (2013.01); H01L 29/0619 (2013.01); H01L 29/0638 (2013.01); H01L 29/785 (2013.01);
Abstract

A layout of a semiconductor device stored on a non-transitory computer-readable medium includes a first transistor in an active device region, the first transistor comprising a first channel region a first source region and a first drain region. The layout further includes a second transistor in a guard ring region, the second transistor comprising a second channel region a second source region and a second drain region. The second channel region includes a semiconductor material having a higher thermal conductivity than a semiconductor material of the first channel region.


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