The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Jan. 23, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ming-Cheng Syu, Hsinchu, TW;
Yu-Tao Yang, Hsinchu, TW;
Chung-Ting Lu, Hsinchu, TW;
PO-Zeng Kang, Hsinchu, TW;
Amit Kundu, Hsinchu, TW;
Wen-Shen Chou, Hsinchu, TW;
Yung-Chow Peng, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes: first and second active regions (ARs) included correspondingly in abutting first and second analog cell regions, a region where the first and second analog cell regions abut (analog-cell-boundary (ACB) region) extending from about a top boundary of the first AR to about a bottom boundary of the second AR; via-to-PGBM_1st-segment contact structures (VBs) correspondingly being under the first or second ARs, a long axis of each VB and a short axis of each of the first and second ARs having about a same length; and a PG segment in a first buried metallization layer (PGBM_1st segment) under the VBs, the PGBM_1st segment underlapping a majority of each of the VBs, and a Y-midline of the PGBM_1st segment being at or proximal to where the first and second analog cell regions abut and thus being at or proximal to a middle of the ACB region.