This inventor holds 5 USPTO granted patents and 14 published patent applications and 1 EPO patent. Top assignee: Intel Corporation. Active years: 2010-2026.
Company Filing History:
Years Active: 2010-2026
Title: Innovations by Alison V Davis
Introduction
Alison V Davis is a prominent inventor based in Portland, OR (US). She has made significant contributions to the field of semiconductor devices, holding a total of 5 patents. Her work focuses on innovative techniques that enhance the functionality and efficiency of integrated circuits.
Latest Patents
One of her latest patents is titled "Metal gate cut formed after source and drain contacts." This patent describes techniques for forming semiconductor devices that include a gate cut created after the formation of source and drain contacts. The semiconductor device features a gate structure that extends from a source region to a drain region, with conductive contacts formed over the source and drain regions along a source/drain trench. The gate structure is interrupted with a dielectric gate cut that extends into the source/drain trench, ensuring complete fill of conductive material when forming the contacts.
Another notable patent is "Integrated circuit structures having cut metal gates." This patent outlines methods for fabricating integrated circuit structures that incorporate cut metal gates. The integrated circuit structure includes a fin that protrudes above a shallow trench isolation (STI) structure, with a gate dielectric material layer and a conductive gate layer positioned over the fin and STI structure. The design ensures that the conductive gate fill material is in contact with the sides of a dielectric gate plug, enhancing the overall performance of the integrated circuit.
Career Highlights
Alison V Davis has established herself as a key figure in the semiconductor industry through her innovative work at Intel Corporation. Her expertise in semiconductor device fabrication has led to advancements that benefit various applications in technology.
Collaborations
Throughout her career, Alison has collaborated with notable colleagues, including Tahir Ghani and Swaminathan Sivakumar. These collaborations have fostered an environment of innovation and have contributed to the success of her projects.
Conclusion
Alison V Davis is a trailblazer in the field of semiconductor technology, with a focus on enhancing integrated circuit structures. Her patents reflect her commitment to innovation and her contributions to the industry will continue to influence future developments.