The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Sep. 26, 2022
Intel Corporation, Santa Clara, CA (US);
Reza Bayati, Portland, OR (US);
Matthew J. Prince, Portland, OR (US);
Alison V. Davis, Portland, OR (US);
Chun C. Kuo, Hillsboro, OR (US);
Andrew Arnold, Hillsboro, OR (US);
Ramy Ghostine, Portland, OR (US);
Li Huey Tan, Hillsboro, OR (US);
INTEL CORPORATION, Santa Clara, CA (US);
Abstract
Techniques are provided to form semiconductor devices that include one or more gate cuts having a layer of polymer material at edges of the gate cut. The polymer layer may be provided as a byproduct of the etching process used to form the gate cut recess through the gate structure, and can protect any exposed portions of the source or drain regions from certain subsequent processes. The gate structure may be interrupted between two transistors with a gate cut that extends through an entire thickness of the gate structure and includes a dielectric material to electrically isolate the portions of the gate structure on either side of the gate cut. The edges of the gate cut may be lined with a polymer layer that is also on any exposed portions of the source or drain regions that were exposed during the etching process used to form the gate cut recess.