Hillsboro, OR, United States of America

Chun C Kuo

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Intel Corporation. Active years: 2026.

USPTO Granted Patents = 2 

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Innovations by Chun C Kuo in Semiconductor Technology

Introduction

Chun C Kuo is an innovative inventor based in Hillsboro, OR (US). She has made significant contributions to the field of semiconductor technology. Although she currently holds no granted patents, her work in developing advanced techniques for semiconductor devices is noteworthy.

Latest Patent Applications

Chun C Kuo's latest patent applications include two significant innovations. The first application, titled "METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS," describes techniques to form semiconductor devices that incorporate a gate cut created after the formation of source and drain contacts. This method ensures that conductive contacts are formed over the source and drain regions, allowing for complete fill of conductive material. The second application, "GATE CUTS WITH SELF-FORMING POLYMER LAYER," outlines techniques for forming gate cuts that include a polymer layer at the edges. This polymer layer serves to protect exposed portions of the source or drain regions during subsequent processes.

Conclusion

Chun C Kuo's innovative approaches in semiconductor technology demonstrate her commitment to advancing the field. Her latest patent applications reflect her expertise and potential for future contributions.

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