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For the Inventor, By the Inventor

Sunnyvale, CA, United States of America

Ali Feiz Zarrin Ghalam

USPTO Granted Patents = 32 

 

Average Co-Inventor Count = 3.3

ph-index = 4

Forward Citations = 50(Granted Patents)


Location History:

  • San Jose, CA (US) (2014)
  • Sunnyvale, CA (US) (2015 - 2023)

Company Filing History:

goldMedal32 out of 37,905 
 
Micron Technology Incorporated
 patents

Years Active: 2014-2025

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32 patents (USPTO):
1. 12248411 - Data burst queue management (2025-03-11),
2. 12182046 - Data burst suspend mode using pause detection (2024-12-31),
3. 12111781 - Data burst suspend mode using multi-level signaling (2024-10-08),
4. 11848071 - Systems and methods involving write training to improve data valid windows (2023-12-19),
5. 11768782 - Data bus duty cycle distortion compensation (2023-09-26),
6. 11733887 - Write training in memory devices by adjusting delays based on data patterns (2023-08-22),
7. 11544208 - Wave pipeline including synchronous stage (2023-01-03),
8. 11528015 - Level shifter with reduced duty cycle variation (2022-12-13),
9. 11442877 - Data bus duty cycle distortion compensation (2022-09-13),
10. 11367473 - Wave pipeline (2022-06-21),
11. 11336265 - Internal clock distortion calibration using DC component offset of clock signal (2022-05-17),
12. 11211104 - Systems and methods involving write training to improve data valid windows (2021-12-28),
13. 11079946 - Write training in memory devices (2021-08-03),
14. 11061836 - Wave pipeline including synchronous stage (2021-07-13),
15. 10972078 - Internal clock distortion calibration using DC component offset of clock signal (2021-04-06),

Title: Ali Feiz Zarrin Ghalam: Innovator in Memory Technology

Introduction: Ali Feiz Zarrin Ghalam is a prolific inventor based in Sunnyvale, CA, holding an impressive total of 31 patents. His contributions to the field of memory technology have significantly influenced the efficiency and performance of data processing systems. Ghalam's innovative ideas continue to play a pivotal role in advancing the capabilities of modern electronics.

Latest Patents: Among Ghalam's recent advancements, two notable patents stand out. The first, titled Data Burst Suspend Mode Using Pause Detection, outlines operations to monitor the logical level of a control pin during active data bursts. This technology allows for improved data handling by determining whether the control pin's logical state satisfies a threshold condition, optimizing the performance of memory devices. The second, Data Burst Suspend Mode Using Multi-Level Signaling, describes a memory device that can toggle control signals to manage data bursts effectively, preserving energy and enhancing system responsiveness during data transfers across an interface bus.

Career Highlights: Throughout his career, Ghalam has established himself as an expert in memory technology, significantly impacting the design and functionality of memory devices. His innovative approach and technical expertise have been instrumental in the success of many projects within the industry.

Collaborations: Ghalam has had the opportunity to collaborate with esteemed professionals in the field, including Qiang Tang and Eric N Lee. These partnerships have allowed for the exchange of ideas and fostered creativity, driving forward advancements in memory technology.

Conclusion: Ali Feiz Zarrin Ghalam continues to be a leading figure in the realm of memory innovation. His extensive portfolio of patents reflects his commitment to enhancing data processing and memory device functionality. As technology progresses, Ghalam’s inventive contributions will undoubtedly shape the future of electronic systems.

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