Pischelsdorf, Austria

Alfred Buchner


Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 1986-2003

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3 patents (USPTO):Explore Patents

Title: Alfred Buchner: Innovator in Semiconductor Technology

Introduction

Alfred Buchner is a notable inventor hailing from Pischelsdorf, Austria. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on the development of semiconductor wafers with unique properties that enhance their performance.

Latest Patents

Buchner's latest patents include a semiconductor wafer with crystal lattice defects and a process for producing this semiconductor wafer. This innovative wafer features a front side, a back side, a top layer, a bottom layer, an upper inner layer lying below the top layer, a lower inner layer lying above the bottom layer, and a central region between the layers. The wafer exhibits an uneven distribution of crystal lattice defects, with the concentration of defects showing a first maximum in the central region and a second maximum in the bottom layer. The crystal lattice defects may include substitutionally or interstitially included nitrogen or vacancies, which contribute to the wafer's unique characteristics.

Career Highlights

Throughout his career, Alfred Buchner has worked with various companies, including Wacker Chemie GmbH, where he has applied his expertise in electronics and semiconductor materials. His innovative approaches have led to advancements in the production and application of semiconductor technology.

Collaborations

Buchner has collaborated with notable colleagues such as Theresia Bauer and Franz Kuhn-Kuhnenfeld. These partnerships have fostered a creative environment that has propelled his research and development efforts.

Conclusion

Alfred Buchner's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor materials and processes.

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