The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
May. 22, 2000
Applicant:
Inventors:
Gunther Obermeier, Kirchweidach, DE;
Alfred Buchner, Pischelsdorf, AT;
Theresia Bauer, Burgkirchen, DE;
Jürgen Hage, Mehring-Öd, DE;
Rasso Ostermeir, Kottgeisering, DE;
Wilfried Von Ammon, Hochburg-Ach, AT;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/126 ; H01L 2/1324 ; H01L 2/142 ; H01L 2/1477 ;
U.S. Cl.
CPC ...
H01L 2/126 ; H01L 2/1324 ; H01L 2/142 ; H01L 2/1477 ;
Abstract
A semiconductor wafer has a front side , a back side , a top layer , a bottom layer , an upper inner layer lying beneath the top layer , an lower inner layer lying above the bottom layer , a central region between the layers and , and an uneven distribution of crystal lattice defects. The crystal lattice defects are substitutionally or interstitially included nitrogen or vacancies.