Kottgeisering, Germany

Rasso Ostermeir


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:

goldMedal1 out of 832,891 
Other
 patents

Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: Rasso Ostermeir: Innovator in Semiconductor Technology

Introduction

Rasso Ostermeir is a notable inventor based in Kottgeisering, Germany. He has made significant contributions to the field of semiconductor technology, particularly with his innovative approaches to semiconductor wafers.

Latest Patents

Rasso Ostermeir holds a patent for a semiconductor wafer with crystal lattice defects and the process for producing this wafer. This invention involves a semiconductor wafer that features a front side, a back side, a top layer, a bottom layer, an upper inner layer beneath the top layer, a lower inner layer above the bottom layer, and a central region between the layers. The wafer is characterized by an uneven distribution of crystal lattice defects, which may include nitrogen or vacancies either substitutionally or interstitially.

Career Highlights

Throughout his career, Rasso has focused on advancing semiconductor technology. His work has led to improvements in the efficiency and performance of semiconductor devices, making a lasting impact on the industry.

Collaborations

Rasso Ostermeir has collaborated with notable colleagues such as Gunther Obermeier and Alfred Buchner. Their combined expertise has contributed to the success of various projects in the semiconductor field.

Conclusion

Rasso Ostermeir's innovative work in semiconductor technology, particularly his patented wafer design, showcases his commitment to advancing the field. His contributions continue to influence the development of more efficient semiconductor devices.

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