Gunther Obermeier

Title: Gunther Obermeier: Innovator in Semiconductor Technology

Introduction

Gunther Obermeier is a notable inventor based in Kirchweidach, Germany. He has made significant contributions to the field of semiconductor technology, particularly with his innovative approaches to semiconductor wafers.

Latest Patents

Obermeier holds a patent for a semiconductor wafer with crystal lattice defects and the process for producing this wafer. This invention features a semiconductor wafer that includes a front side, a back side, a top layer, a bottom layer, an upper inner layer beneath the top layer, a lower inner layer above the bottom layer, and a central region between the layers. The wafer is characterized by an uneven distribution of crystal lattice defects, which may include substitutionally or interstitially included nitrogen or vacancies.

Career Highlights

Throughout his career, Gunther Obermeier has focused on advancing semiconductor technology. His work has led to the development of innovative solutions that enhance the performance and reliability of semiconductor devices.

Collaborations

Obermeier has collaborated with notable colleagues, including Alfred Buchner and Theresia Bauer. These partnerships have contributed to the advancement of his research and the successful implementation of his inventions.

Conclusion

Gunther Obermeier's contributions to semiconductor technology, particularly through his patented innovations, highlight his role as a key figure in the field. His work continues to influence the development of advanced semiconductor materials and processes.