This inventor holds 2 USPTO granted patents and 1 EPO patent. Top assignee: Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh. Active years: 2014-2017.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Munich, DE (2014)
- München, DE (2017)
Company Filing History:
Years Active: 2014-2017
Title: Innovations of Aleksandra Kramer
Introduction
Aleksandra Kramer is a prominent inventor based in Munich, Germany. She has made significant contributions to the field of electron beam technology, holding 2 patents that showcase her innovative spirit and technical expertise.
Latest Patents
Her latest patents include a "Thermal field emitter tip, electron beam device including a thermal field emitter tip and method for operating an electron beam device." This invention describes an electron beam device designed for inspecting samples using an electron beam. The device features an electron beam source that includes a thermal field emitter with an emission facet configured for electron emission. The design incorporates specific dimensions for the emission facet and edge facet to optimize performance. Additionally, she has developed an "Octopole device and method for spot size improvement," which addresses mechanical, magnetic, and electrostatic inaccuracies in scanning charged particle beam devices. This method includes a detailed alignment procedure to compensate for astigmatism, enhancing the precision of charged particle beams.
Career Highlights
Aleksandra works at Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh, where she applies her expertise in semiconductor testing and electron beam technology. Her work has been instrumental in advancing the capabilities of electron beam devices.
Collaborations
She collaborates with notable colleagues, including Stefan Lanio and John Breuer, contributing to a dynamic and innovative work environment.
Conclusion
Aleksandra Kramer's contributions to electron beam technology and her innovative patents reflect her dedication to advancing the field. Her work continues to influence the development of sophisticated testing devices in the semiconductor industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile