The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2017

Filed:

Feb. 29, 2016
Applicant:

Ict Integrated Circuit Testing Gesellschaft Für Halbleiterprüftechnik Mbh, Heimstetten, DE;

Inventors:

Stefan Lanio, Erding, DE;

Aleksandra Kramer, München, DE;

John Breuer, München, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/073 (2006.01); H01J 1/16 (2006.01); H01J 19/10 (2006.01); H01J 9/02 (2006.01);
U.S. Cl.
CPC ...
H01J 37/073 (2013.01); H01J 1/16 (2013.01); H01J 9/02 (2013.01); H01J 19/10 (2013.01); H01J 2237/06341 (2013.01);
Abstract

An electron beam device for inspecting a sample with an electron beam is described. The electron beam device includes an electron beam source including a thermal field emitter, which includes an emitter tip having an emission facet configured for electron emission, wherein the emission facet has an emission facet width; and a first side facet and a second side facet, wherein an edge facet is formed between the first side facet and the second side facet, which has an edge facet width. The edge facet width is between 20% and 40% of the emission facet width. The electron beam source further includes an extractor device; and a heating device for heating the thermal field emitter. The electron beam device further includes electron beam optics and a detector device for detecting secondary charged particles generated at an impingement or hitting of the primary electron beam on the sample.


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