San Jose, CA, United States of America

Albert V Kordesch


Average Co-Inventor Count = 3.9

ph-index = 5

Forward Citations = 404(Granted Patents)


Company Filing History:


Years Active: 1999-2004

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8 patents (USPTO):Explore Patents

Title: Unveiling Albert V. Kordesch: A Visionary Inventor Revolutionizing Semiconductor Memory Technology

Introduction:

Albert V. Kordesch, a brilliant mind in the realm of innovation, is known for his remarkable contributions to semiconductor memory technology. Residing in the tech hub of San Jose, CA (US), Kordesch has left a lasting impact with his groundbreaking inventions and patents.

Latest Patents:

Albert V. Kordesch's latest patents showcase his ingenuity in advancing memory array formation and accuracy in split-gate nonvolatile semiconductor memory. His method of forming memory arrays based on a triple-polysilicon source-side injection non-volatile memory cell demonstrates his expertise in semiconductor memory design. Moreover, his dual reference cell patent highlights his commitment to enhancing the precision of reading values stored in data cells.

Career Highlights:

Throughout his illustrious career, Albert V. Kordesch has amassed a total of 8 patents, solidifying his position as a pioneering inventor in the semiconductor industry. His work at esteemed companies like Winbond Electronics Corporation and Information Storage Devices, Inc. has been instrumental in pushing the boundaries of memory technology.

Collaborations:

In his journey of innovation, Albert V. Kordesch has collaborated with esteemed professionals such as Chun-Mai Liu and Ming-Bing Chang. Together, they have worked towards creating cutting-edge solutions and revolutionizing the semiconductor memory landscape.

Conclusion:

Albert V. Kordesch's relentless pursuit of innovation and his dedication to advancing semiconductor memory technology have cemented his legacy as a visionary inventor. His patents and inventions continue to shape the technological landscape, inspiring future generations to push the boundaries of what is possible in the world of semiconductor memory.

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