Alan G Solheim

Title: Alan G Solheim: Innovator in BiCMOS Technology

Introduction

Alan G Solheim is a prominent inventor based in Puyallup, WA (US). He has made significant contributions to the field of semiconductor technology, particularly in BiCMOS devices. With a total of 10 patents to his name, Solheim's work has advanced the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest patents is a method of fabricating a BiCMOS device. This innovative method achieves improved performance through the use of wrap-around silicide contacts, enhanced MOS gate formation, and the implementation of n- and p-type LDDs. Additionally, it features the formation of very shallow base regions in bipolar transistors, along with separate implants for the base regions of bipolar transistors and the source/drains of MOSFETs. Another notable patent involves spacer formation in a semiconductor structure. This patent discloses a contact structure and fabrication method for a semiconductor device that includes multiple semiconductor regions. Each region has a top surface and at least one sidewall surface, with select dielectric spacers formed along the sidewalls of specific semiconductor regions.

Career Highlights

Alan G Solheim is currently associated with National Semiconductor Corporation, where he continues to innovate in the semiconductor industry. His work has been instrumental in developing technologies that enhance the functionality and reliability of electronic devices.

Collaborations

Throughout his career, Solheim has collaborated with notable colleagues, including Vida Ilderem and Rick C Jerome. These collaborations have contributed to the advancement of semiconductor technologies and the successful development of innovative solutions.

Conclusion

Alan G Solheim's contributions to BiCMOS technology and semiconductor fabrication have established him as a key figure in the field. His patents reflect a commitment to innovation and excellence in technology development.