The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 1995
Filed:
Sep. 23, 1994
Applicant:
Inventor:
Alan G Solheim, Puyallup, W;
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437164 ; 437 31 ; 437 59 ; 437162 ;
Abstract
A bipolar transistor and a PMOS device achieves improved performance through the use of borosilicate glass (BSG) as the sidewall spacer material. The sidewall spacer material also is used for injection of boron into adjacent substrate material for forming shallow p+ doped junctions. By using diffusion from the BSG to form and/or maintain (during subsequent processing) a bipolar base region, or a PMOS source and/or drain region, rather than ion implantation, a base region is formed which is both shallow and has a low sheet resistance.