The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1993
Filed:
Feb. 13, 1992
Applicant:
Inventors:
Vida Ilderem, Puyallup, WA (US);
Alan G Solheim, Puyallup, WA (US);
Rick C Jerome, Puyallup, WA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 44 ; 437200 ; 437245 ; 148D / ;
Abstract
A method for formation of silicide structures on a semiconductor device. Oxide sidewalls are formed upon and selectively removed from polysilicon contacts. Refractory metal is deposited and heated, unreacted metal is removed, leaving a metal silicide on selected polysilicon sidewalls.