The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 1991
Filed:
Jun. 26, 1990
Applicant:
Inventor:
Alan G Solheim, Puyallup, WA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 31 ; 148D / ;
Abstract
An improved method of forming bipolar devices and an improved bipolar device. The method provides for formation of an emitter contact on the base of a bipolar transistor followed by a collector implant. The collector implant varies the doping profile of the collector under the emitter contact but not adjacent the emitter contact, providing improved device characteristics. The collector implant penetrates the base of the transistor, preferably having a range deeper than the thickness of the single-poly contact layer.