The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 1994
Filed:
Mar. 01, 1993
Applicant:
Inventors:
Vida Ilderem, Puyallup, WA (US);
Ali A Iranmanesh, Federal Way, WA (US);
Alan G Solheim, Puyallup, WA (US);
Christopher S Blair, Puyallup, WA (US);
Rick C Jerome, Puyallup, WA (US);
Rajeeva Lahri, Puyallup, WA (US);
Madan Biswal, Puyallup, WA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 34 ; 437 59 ; 437162 ; 148D / ;
Abstract
A BiCMOS method and device. The BiCMOS device achieves improved performance through the use of wraparound silicide contacts, improved MOS gate formation, the use of n- and p-type LDD's, the formation of very shallow base regions in bipolar transistors, and through separate implants for base regions of the bipolar transistors and source/drains of the MOSFETS.