Puyallup, WA, United States of America

Madan Biswal


Average Co-Inventor Count = 7.9

ph-index = 4

Forward Citations = 77(Granted Patents)


Company Filing History:


Years Active: 1992-1997

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4 patents (USPTO):Explore Patents

Title: The Innovations of Madan Biswal

Introduction

Madan Biswal is a notable inventor based in Puyallup, WA (US). He has made significant contributions to the field of semiconductor technology, particularly through his work on BiCMOS devices. With a total of 4 patents to his name, Biswal's innovations have had a considerable impact on the industry.

Latest Patents

One of his latest patents is a method of fabricating a BiCMOS device. This innovative method and device achieve improved performance through the use of wrap-around silicide contacts, enhanced MOS gate formation, and the implementation of n- and p-type LDDs. Additionally, the device features the formation of very shallow base regions in bipolar transistors, along with separate implants for the base regions of the bipolar transistors and the source/drains of the MOSFETs.

Career Highlights

Madan Biswal is currently employed at National Semiconductor Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the performance and efficiency of BiCMOS devices.

Collaborations

Throughout his career, Biswal has collaborated with esteemed colleagues such as Vida Ilderem and Ali A Iranmanesh. These partnerships have fostered a creative environment that has led to groundbreaking innovations in the field.

Conclusion

Madan Biswal's contributions to semiconductor technology, particularly through his patents on BiCMOS devices, highlight his role as a significant inventor in the industry. His work continues to influence advancements in this critical area of technology.

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