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For the Inventor, By the Inventor

Hillsboro, OR, United States of America

Abhijit Jayant Pethe

This inventor holds 23 USPTO granted patents and 5 published patent applications and 8 EPO patents, primarily in Semiconductor Fabrication. Top assignees: Intel Corporation, Sony Group Corporation, Sony Corporation. Active years: 2013-2025.

USPTO Granted Patents = 23 

% Patents Active = 87.0

 

Average Co-Inventor Count = 5.4

ph-index = 6

Forward Citations = 181(Granted Patents)


Company Filing History:

goldMedal19 out of 56,290 
 
Intel Corporation
 patents
silverMedal3 out of 4,225 
 
Sony Group Corporation
 patents
bronzeMedal1 out of 58,145 
 
Sony Corporation
 patents

Years Active: 2013-2025

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Areas of Expertise:
Nanowire Devices
Gate-All-Around Transistors
Epitaxial Regions
Strained Devices
3D Semiconductor Structures
Integration Methods
Fabrication Techniques
Undercut Etch-Stop Layer
23 patents (USPTO):Explore Patents
1. 12363967 - Integration methods to fabricate internal spacers for nanowire devices (2025-07-15),
2. 12294027 - Semiconductor device having doped epitaxial region and its methods of fabrication (2025-05-06),
3. 12278144 - Gate contact structure over active gate and method to fabricate same (2025-04-14),
4. 11908934 - Semiconductor device having doped epitaxial region and its methods of fabrication (2024-02-20),
5. 11869939 - Integration methods to fabricate internal spacers for nanowire devices (2024-01-09),
6. 11302777 - Integration methods to fabricate internal spacers for nanowire devices (2022-04-12),
7. 11004739 - Gate contact structure over active gate and method to fabricate same (2021-05-11),
8. 10957796 - Semiconductor device having doped epitaxial region and its methods of fabrication (2021-03-23),
9. 10847631 - Gate-all-around (GAA) transistors with nanowires on an isolation pedestal (2020-11-24),
10. 10804357 - Integration methods to fabricate internal spacers for nanowire devices (2020-10-13),
11. 10580860 - Integration methods to fabricate internal spacers for nanowire devices (2020-03-03),
12. 10283589 - Integration methods to fabricate internal spacers for nanowire devices (2019-05-07),
13. 10229981 - Gate-all-around (GAA) transistor with stacked nanowires on locally isolated substrate (2019-03-12),
14. 10192783 - Gate contact structure over active gate and method to fabricate same (2019-01-29),
15. 10121856 - Integration methods to fabricate internal spacers for nanowire devices (2018-11-06),

Title: Abhijit Jayant Pethe - Pioneering Inventor from Hillsboro

Introduction: Abhijit Jayant Pethe is a distinguished inventor based in Hillsboro, Oregon, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Abhijit Jayant Pethe holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating a more sustainable future.

Career Highlights: With a background in engineering and a passion for problem-solving, Abhijit Jayant Pethe has had a successful career marked by innovative solutions and cutting-edge inventions that have had a significant impact on various industries.

Collaborations: Throughout his career, Abhijit Jayant Pethe has collaborated with leading research institutions, universities, and technology companies to bring his inventions to life and further advance the field of technology.

Conclusion: Abhijit Jayant Pethe's relentless pursuit of innovation and his dedication to creating a positive impact through his inventions make him a true pioneer in the world of technology.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
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