The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2024
Filed:
Jan. 28, 2021
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Anand S. Murthy, Portland, OR (US);
Daniel Bourne Aubertine, North Plains, OR (US);
Tahir Ghani, Portland, OR (US);
Abhijit Jayant Pethe, Hillsboro, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7834 (2013.01); H01L 21/0243 (2013.01); H01L 21/02057 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02636 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/78 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 21/28079 (2013.01); H01L 29/495 (2013.01); H01L 29/66545 (2013.01); H01L 29/7853 (2013.01);
Abstract
Embodiments of the present invention describe a epitaxial region on a semiconductor device. In one embodiment, the epitaxial region is deposited onto a substrate via cyclical deposition-etch process. Cavities created underneath the spacer during the cyclical deposition-etch process are backfilled by an epitaxial cap layer. The epitaxial region and epitaxial cap layer improves electron mobility at the channel region, reduces short channel effects and decreases parasitic resistance.