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EPO Patents = 1

Forward Citations = 46

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5 inventors (with patents filed for the assignee):

Ashok K Kapoor (10 out of 124 patents)

Robert J Strain (5 out of 25 patents)

Yannis Tsividis (1 out of 52 patents)

4. Reuven Avraham Marko (1 out of 27 patents)

5. Asen Asenov (1 out of 11 patents)

13 patents: Sort by Forward Citations

1. 9847404 - Fluctuation resistant FinFET (2017-12-19),

2. 9379214 - Reduced variation MOSFET using a drain-extension-last process (2016-06-28),

3. 9147459 - Dynamic random access memories with an increased stability of the MOS memory cells (2015-09-29),

4. 9135977 - Random access memories with an increased stability of the MOS memory cell (2015-09-15),

5. 8247840 - Apparatus and method for improved leakage current of silicon on insulator transistors using a forward biased diode (2012-08-21),

6. 8207784 - Method and apparatus for MOSFET drain-source leakage reduction (2012-06-26),

7. 8048732 - Method for reducing leakage current and increasing drive current in a metal-oxide semiconductor (MOS) transistor (2011-11-01),

8. 7863689 - Apparatus for using a well current source to effect a dynamic threshold voltage of a MOS transistor (2011-01-04),

9. 7691702 - Method of manufacture of an apparatus for increasing stability of MOS memory cells (2010-04-06),

10. 7651905 - Apparatus and method for reducing gate leakage in deep sub-micron MOS transistors using semi-rectifying contacts (2010-01-26),

11. 7586155 - Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors (2009-09-08),

12. 7375402 - Method and apparatus for increasing stability of MOS memory cells (2008-05-20),

13. 7224205 - Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors (2007-05-29),

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