The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Feb. 12, 2009
Applicant:
Yannis Tsividis, New York, NY (US);
Inventor:
Yannis Tsividis, New York, NY (US);
Assignee:
Semi Solutions, LLC, Los Gatos, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/01 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method and apparatus is taught for reducing drain-source leakage in MOS circuits. In an exemplary CMOS inverter, a first transistor causes the body of an affected transistor to be at a first body potential. A second transistor brings the body potential of the affected transistor to a second body potential by providing an accurate body voltage from a body voltage source. Exemplary body bias voltage sources are further described that can drive one or more gate transistors of different gate circuits.