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Netanya, Israel

Saifun Semiconductors Ltd.

USPTO Granted Patents = 118

% Expired Patents = 12.7

Forward Citations = 6,437

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35 inventors (with patents filed for the assignee):

Boaz Eitan (73 out of 129 patents)

Eduardo Maayan (41 out of 50 patents)

Joseph Shor (12 out of 39 patents)

4. Ilan Bloom (11 out of 17 patents)

5. Assaf Shappir (11 out of 15 patents)

6. Guy Cohen (10 out of 23 patents)

7. Yair Sofer (10 out of 18 patents)

8. Yoram Betser (9 out of 39 patents)

9. Eli Lusky (9 out of 15 patents)

10. Oleg Dadashev (8 out of 21 patents)

11. Ron Eliyahu (7 out of 7 patents)

12. Zeev Cohen (6 out of 9 patents)

13. Rustom Irani (5 out of 7 patents)

14. Shai Eisen (5 out of 6 patents)

15. Yan Polansky (5 out of 6 patents)

Core Competencies:

Non-Volatile Memory

NROM

Memory Array

Charge Pump

Programming Circuit

Erasing Methods

Memory Structure

Silicon Trench Isolation

Multi-Level Sensing

Dynamic Matching

Flash Memory

EEPROM

118 patents: Sort by Forward Citations

1. 7811887 - Forming silicon trench isolation (STI) in semiconductor devices self-aligned to diffusion (2010-10-12),

2. 7808818 - Secondary injection for NROM (2010-10-05),

3. 7804126 - Dense non-volatile memory array and method of fabrication (2010-09-28),

4. 7786512 - Dense non-volatile memory array and method of fabrication (2010-08-31),

5. 7760554 - NROM non-volatile memory and mode of operation (2010-07-20),

6. 7755938 - Method for reading a memory array with neighbor effect cancellation (2010-07-13),

7. 7743230 - Memory array programming circuit and a method for using the circuit (2010-06-22),

8. 7742339 - Rd algorithm improvement for NROM technology (2010-06-22),

9. 7738304 - Multiple use memory chip (2010-06-15),

10. 7715237 - Method, system and circuit for operating a non-volatile memory array (2010-05-11),

11. 7692961 - Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection (2010-04-06),

12. 7675782 - Method, system and circuit for programming a non-volatile memory array (2010-03-09),

13. 7668017 - Method of erasing non-volatile memory cells (2010-02-23),

14. 7652930 - Method, circuit and system for erasing one or more non-volatile memory cells (2010-01-26),

15. 7638850 - Non-volatile memory structure and method of fabrication (2009-12-29),

Company Overview

Saifun Semiconductors Ltd., based in Netanya, Israel, specializes in the development of advanced non-volatile memory technologies. The company focuses on innovative solutions such as NROM (Nitride Read Only Memory) and various memory structures that enhance data retention and performance. Their expertise extends to critical components like memory arrays, charge pumps, and programming circuits, as well as sophisticated erasing methods. Saifun's contributions are pivotal in the evolution of memory technology, catering to diverse applications in the semiconductor industry.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 13 2026

118 Patents

#2 in Netanya

#48 in Israel

#6,742 in the World

Netanya, Israel

Saifun Semiconductors Ltd.

Forward Citations = 6,437

35 inventors:

Boaz Eitan (73 out of 129 patents)

Eduardo Maayan (41 out of 50 patents)

Joseph Shor (12 out of 39 patents)

4. Ilan Bloom (11 out of 17 patents)

5. Assaf Shappir (11 out of 15 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Saifun Semiconductors Ltd.. Retrieved from https://idiyas.com/company/saifun-semiconductors

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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