The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2010

Filed:

Apr. 03, 2005
Applicants:

Assaf Shappir, Kiryat Ono, IL;

Ilan Bloom, Haifa, IL;

Boaz Eitan, Ra'anana, IL;

Inventors:

Assaf Shappir, Kiryat Ono, IL;

Ilan Bloom, Haifa, IL;

Boaz Eitan, Ra'anana, IL;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention is a method circuit and system for erasing one or more non-volatile memory ('NVM') cells in an NVM array. One or more NVM cells of a memory array may be erased using an erase pulse produced by a controller and/or erase pulse source adapted to induce and/or invoke a substantially stable channel current in the one or more NVM cells during an erasure procedure. The voltage profile of an erase pulse may be predefined or the voltage profile of the erase pulse may be dynamically adjusted based on feedback from a current sensor during an erase procedure.


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