The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Aug. 02, 2006
Applicants:
Boaz Eitan, Ra'anana, IL;
Natalie Shainsky, Or-Akiva, IL;
Inventors:
Boaz Eitan, Ra'anana, IL;
Natalie Shainsky, Or-Akiva, IL;
Assignee:
Saifun Semiconductors Ltd., Netanya, IL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
Operating NVM memory cell such as an NROM cell by using a combination of Fowler-Nordheim tunneling (FNT), hot hole injection (HHI), and channel hot electron (CHE) injection. In the FNT erase step, only a few cells may be verified, and in the CHE second programming step, the threshold voltage of those cells which were not fully erased in the FNT erase step is increased to a high threshold voltage level (ERS state).