The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Dec. 28, 2006
Applicant:
Boaz Eitan, Ra'anana, IL;
Inventor:
Boaz Eitan, Ra'anana, IL;
Assignee:
Saifun Semiconductors Ltd., Netanya, IL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
Secondary electron injection (SEI) is used for programming NVM cells having separate charge storage areas in an ONO layer, such as NROM cells. Various combinations of low wordline voltage (Vwl), negative substrate voltabe (Vb), and shallow and deep implants facilitate the process. Second bit problems may be controlled, and retention and punchthrough may be improved. Lower SEI programming current may result in relaxed constraints on bitine resistance, number of contacts required, and power supply requirements.