For the Inventor, By the Inventor

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Sunnyvale, CA, United States of America

Monolithic System Technology, Inc.

USPTO Granted Patents = 72

% Expired Patents = 15.3

Trademarks = 1

Forward Citations = 4,079

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10 inventors (with patents filed for the assignee):

Wingyu Leung (57 out of 98 patents)

Fu-Chieh Hsu (47 out of 61 patents)

Winston Lee (7 out of 11 patents)

4. Wing Yu Leung (5 out of 5 patents)

5. Jui-Pin Tang (3 out of 3 patents)

6. Jae-Kwang Sim (2 out of 2 patents)

7. Kit Sang Tam (2 out of 17 patents)

8. Jeffrey J Lin (2 out of 2 patents)

9. Chenming Hu (1 out of 155 patents)

10. Jae-Hong Jeong (1 out of 1 patent)

Core Competencies:

Non-Volatile Memory

DRAM Cells

High-Speed Read-Write

Floating-Body DRAM

Memory Array

Sense Amplifiers

Cache Memory

Temperature Adaptive Refresh

Data Retention

Memory Redundancy

Semiconductor Packaging

Circuit Module Architecture

72 patents: Sort by Forward Citations

1. 7275200 - Transparent error correcting memory that supports partial-word write (2007-09-25),

2. 7274618 - Word line driver for DRAM embedded in a logic process (2007-09-25),

3. 7206913 - High speed memory system (2007-04-17),

4. 7056785 - Non-volatile memory cell fabricated with slight modification to a conventional logic process and methods of operating same (2006-06-06),

5. 7051264 - Error correcting memory and method of operating same (2006-05-23),

6. 6964895 - Method of fabricating vertical one-transistor floating-body DRAM cell in bulk CMOS process with electrically isolated charge storage region (2005-11-15),

7. 6913964 - Method of fabricating a one transistor floating-body DRAM cell in bulk CMOS process with electrically isolated charge storage region (2005-07-05),

8. 6898140 - Method and apparatus for temperature adaptive refresh in 1T-SRAM compatible memory using the subthreshold characteristics of MOSFET transistors (2005-05-24),

9. 6841821 - Non-volatile memory cell fabricated with slight modification to a conventional logic process and methods of operating same (2005-01-11),

10. 6808169 - Non-volatile memory with crown electrode to increase capacitance between control gate and floating gate (2004-10-26),

11. 6795364 - Method and apparatus for lengthening the data-retention time of a DRAM device in standby mode (2004-09-21),

12. 6784048 - Method of fabricating a DRAM cell having a thin dielectric access transistor and a thick dielectric storage (2004-08-31),

13. 6754746 - Memory array with read/write methods (2004-06-22),

14. 6751157 - Method and apparatus for completely hiding refresh operations in a DRAM device using clock division (2004-06-15),

15. 6744676 - DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same (2004-06-01),

Monolithic System Technology, Inc. is a leading technology solutions provider specializing in the design, development, and implementation of advanced software and hardware systems for various industries. With over 25 years of experience, we offer cutting-edge solutions that enable businesses to streamline their operations, enhance productivity, and drive growth. Our team of skilled professionals is dedicated to delivering innovative and reliable solutions tailored to meet the unique needs of our clients. Visit our website to learn more about our comprehensive range of services and how we can help your business thrive.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Sep 15 2026

72 Patents

#71 in Sunnyvale, CA

#1,204 in California

#5,098 in US

#10,365 in the World

Sunnyvale, CA, United States of America

Monolithic System Technology, Inc.

Forward Citations = 4,079

10 inventors:

Wingyu Leung (57 out of 98 patents)

Fu-Chieh Hsu (47 out of 61 patents)

Winston Lee (7 out of 11 patents)

4. Wing Yu Leung (5 out of 5 patents)

5. Jui-Pin Tang (3 out of 3 patents)

Please report any incorrect information to [email protected]

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