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Sunnyvale, CA, United States of America

Monolithic System Technology, Inc.

USPTO Granted Patents = 72

% Expired Patents = 15.3

Trademarks = 1

Forward Citations = 4,079

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10 inventors (with patents filed for the assignee):

Wingyu Leung (57 out of 98 patents)

Fu-Chieh Hsu (47 out of 61 patents)

Winston Lee (7 out of 11 patents)

4. Wing Yu Leung (5 out of 5 patents)

5. Jui-Pin Tang (3 out of 3 patents)

6. Jae-Kwang Sim (2 out of 2 patents)

7. Kit Sang Tam (2 out of 17 patents)

8. Jeffrey J Lin (2 out of 2 patents)

9. Chenming Hu (1 out of 155 patents)

10. Jae-Hong Jeong (1 out of 1 patent)

Core Competencies:

Non-Volatile Memory

DRAM Cells

High-Speed Read-Write

Floating-Body DRAM

Memory Array

Sense Amplifiers

Cache Memory

Temperature Adaptive Refresh

Data Retention

Memory Redundancy

Semiconductor Packaging

Circuit Module Architecture

72 patents: Sort by Forward Citations

1. 7275200 - Transparent error correcting memory that supports partial-word write (2007-09-25),

2. 7274618 - Word line driver for DRAM embedded in a logic process (2007-09-25),

3. 7206913 - High speed memory system (2007-04-17),

4. 7056785 - Non-volatile memory cell fabricated with slight modification to a conventional logic process and methods of operating same (2006-06-06),

5. 7051264 - Error correcting memory and method of operating same (2006-05-23),

6. 6964895 - Method of fabricating vertical one-transistor floating-body DRAM cell in bulk CMOS process with electrically isolated charge storage region (2005-11-15),

7. 6913964 - Method of fabricating a one transistor floating-body DRAM cell in bulk CMOS process with electrically isolated charge storage region (2005-07-05),

8. 6898140 - Method and apparatus for temperature adaptive refresh in 1T-SRAM compatible memory using the subthreshold characteristics of MOSFET transistors (2005-05-24),

9. 6841821 - Non-volatile memory cell fabricated with slight modification to a conventional logic process and methods of operating same (2005-01-11),

10. 6808169 - Non-volatile memory with crown electrode to increase capacitance between control gate and floating gate (2004-10-26),

11. 6795364 - Method and apparatus for lengthening the data-retention time of a DRAM device in standby mode (2004-09-21),

12. 6784048 - Method of fabricating a DRAM cell having a thin dielectric access transistor and a thick dielectric storage (2004-08-31),

13. 6754746 - Memory array with read/write methods (2004-06-22),

14. 6751157 - Method and apparatus for completely hiding refresh operations in a DRAM device using clock division (2004-06-15),

15. 6744676 - DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same (2004-06-01),

Monolithic System Technology, Inc., based in Sunnyvale, California, specializes in advanced memory technology solutions. The company focuses on developing innovative non-volatile memory systems, including high-speed read-write capabilities and floating-body DRAM. Their expertise extends to memory arrays, sense amplifiers, and cache memory, with a commitment to enhancing performance through temperature adaptive refresh techniques. MST's cutting-edge technologies aim to address the evolving demands of data storage and processing in various applications.

Profile summary based on public USPTO records.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

72 Patents

#71 in Sunnyvale, CA

#1,204 in California

#5,101 in US

#10,383 in the World

Sunnyvale, CA, United States of America

Monolithic System Technology, Inc.

Forward Citations = 4,079

10 inventors:

Wingyu Leung (57 out of 98 patents)

Fu-Chieh Hsu (47 out of 61 patents)

Winston Lee (7 out of 11 patents)

4. Wing Yu Leung (5 out of 5 patents)

5. Jui-Pin Tang (3 out of 3 patents)

Please report any incorrect information to [email protected]

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