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Enkris Semiconductor, Inc.

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USPTO Granted Patents = 149

EPO Patents = 8

Trademarks = 6

Forward Citations = 27

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11 inventors (with patents filed for the assignee):

Kai Cheng (140 out of 145 patents)

Liyang Zhang (29 out of 29 patents)

Peng Xiang (11 out of 11 patents)

4. Weihua Liu (10 out of 10 patents)

5. Kai Liu (7 out of 34 patents)

6. Yuchao Chen (5 out of 7 patents)

7. Yu Zhu (3 out of 3 patents)

8. Dandan Zhu (2 out of 2 patents)

9. Zhuan Liu (2 out of 2 patents)

10. Liangfang Sun (1 out of 1 patent)

11. Zhizhong Guo (1 out of 1 patent)

Core Competencies:

Semiconductor Structure

Light-Emitting Device

Manufacturing Method

Epitaxial Substrate

Schottky Diode

GaN-Based Structures

Resonant Tunneling Diodes

Full-Color LED

Optoelectronic Device

Enhancement-Mode Device

Composite Substrate

Image Sensor

149 patents: Sort by Forward Citations

1. 12772617 - Composite substrate, epitaxial wafer, and semiconductor device (2026-10-20),

2. 12772482 - Semiconductor structure and manufacturing method therefor (2026-10-20),

3. 12765148 - Light-emitting structure (2026-10-13),

4. 12764988 - Semiconductor structure having a plurality of heterojunction structures stack (2026-10-13),

5. 12757772 - Composite substrate, manufacturing method thereof, and semiconductor device (2026-10-06),

6. 12757461 - Composite substrate and manufacturing method therefor, and semiconductor device structure (2026-10-06),

7. 12756159 - Manufacturing method of vertical cavity surface emitting laser (2026-10-06),

8. 12751032 - Semiconductor device with nanowire heterojunction and manufacturing method thereof (2026-09-29),

9. 12745499 - Semiconductor structures and manufacturing methods thereof (2026-09-22),

10. 12745488 - Epitaxial structure of light-emitting device and manufacturing method thereof (2026-09-22),

11. 12740106 - Semiconductor structure and manufacturing method therefor (2026-09-15),

12. 12740088 - Enhancement mode switching devices and manufacturing methods thereof (2026-09-15),

13. 12727312 - Micro light-emitting diode chip, manufacturing method therefor, and electronic device (2026-09-01),

14. 12727285 - Multi-wavelength LED structures and manufacturing methods thereof (2026-09-01),

15. 12727218 - Semiconductor structure and method for manufacturing the same (2026-09-01),

Company Overview

Enkris Semiconductor, Inc., based in Jiangsu, China, specializes in the development and manufacturing of advanced semiconductor structures. The company focuses on innovative technologies including light-emitting devices, epitaxial substrates, and Schottky diodes. Enkris is recognized for its expertise in GaN-based structures and resonant tunneling diodes, contributing to the evolution of full-color LED technologies. Their commitment to research and development positions them as a key player in the semiconductor industry, driving advancements in electronic components.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 27 2026

149 Patents

#2 in Jiangsu

#226 in China

#5,488 in the World

Enkris Semiconductor, Inc.

Forward Citations = 27

11 inventors:

Kai Cheng (140 out of 145 patents)

Liyang Zhang (29 out of 29 patents)

Peng Xiang (11 out of 11 patents)

4. Weihua Liu (10 out of 10 patents)

5. Kai Liu (7 out of 34 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Enkris Semiconductor, Inc.. Retrieved from https://idiyas.com/company/enkris-semiconductor

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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