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Enkris Semiconductor, Inc.

USPTO Granted Patents = 142

EPO Patents = 8

Trademarks = 6

Forward Citations = 24

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11 inventors (with patents filed for the assignee):

Kai Cheng (133 out of 138 patents)

Liyang Zhang (28 out of 28 patents)

Peng Xiang (11 out of 11 patents)

4. Weihua Liu (10 out of 10 patents)

5. Kai Liu (7 out of 34 patents)

6. Yuchao Chen (5 out of 7 patents)

7. Yu Zhu (3 out of 3 patents)

8. Dandan Zhu (2 out of 2 patents)

9. Zhuan Liu (2 out of 2 patents)

10. Liangfang Sun (1 out of 1 patent)

11. Zhizhong Guo (1 out of 1 patent)

Core Competencies:

Semiconductor Structure

Light-Emitting Device

Manufacturing Method

Epitaxial Substrate

Schottky Diode

GaN-Based Structures

Resonant Tunneling Diodes

Full-Color LED

Optoelectronic Device

Enhancement-Mode Device

Composite Substrate

Image Sensor

142 patents: Sort by Forward Citations

1. 12751032 - Semiconductor device with nanowire heterojunction and manufacturing method thereof (2026-09-29),

2. 12745499 - Semiconductor structures and manufacturing methods thereof (2026-09-22),

3. 12745488 - Epitaxial structure of light-emitting device and manufacturing method thereof (2026-09-22),

4. 12740106 - Semiconductor structure and manufacturing method therefor (2026-09-15),

5. 12740088 - Enhancement mode switching devices and manufacturing methods thereof (2026-09-15),

6. 12727312 - Micro light-emitting diode chip, manufacturing method therefor, and electronic device (2026-09-01),

7. 12727285 - Multi-wavelength LED structures and manufacturing methods thereof (2026-09-01),

8. 12727218 - Semiconductor structure and method for manufacturing the same (2026-09-01),

9. 12720939 - LED structure and preparing method of LED structure (2026-08-25),

10. 12720914 - Multi-quantum well semiconductor structure including a scandium nitride insertion layer (2026-08-25),

11. 12713977 - SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR (2026-08-18),

12. 12713738 - LED STRUCTURE AND GAN-BASED SUBSTRATE THEREOF, AND METHOD FOR MANUFACTURING GAN-BASED SUBSTRATE (2026-08-18),

13. 12701849 - Light emitting structures formed in opening in a mask and preparation method therefor (2026-08-04),

14. 12701844 - Semiconductor light-emitting device and preparation method thereof (2026-08-04),

15. 12701827 - Semiconductor structures with adjustable light-emitting wavelengths and manufacturing methods thereof (2026-08-04),

Enkris Semiconductor, Inc., based in Jiangsu, China, specializes in the development and manufacturing of advanced semiconductor structures. The company focuses on innovative technologies including light-emitting devices, epitaxial substrates, and Schottky diodes. Enkris is recognized for its expertise in GaN-based structures and resonant tunneling diodes, contributing to the evolution of full-color LED technologies. Their commitment to research and development positions them as a key player in the semiconductor industry, driving advancements in electronic components.

Profile summary based on public USPTO records.

Company Badge

USPTO Data Jan 1 1976 - Sep 29 2026

142 Patents

#3 in Jiangsu

#241 in China

#5,714 in the World

Enkris Semiconductor, Inc.

Forward Citations = 24

11 inventors:

Kai Cheng (133 out of 138 patents)

Liyang Zhang (28 out of 28 patents)

Peng Xiang (11 out of 11 patents)

4. Weihua Liu (10 out of 10 patents)

5. Kai Liu (7 out of 34 patents)

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