This inventor holds 1 USPTO granted patent. Top assignee: Enkris Semiconductor, Inc.. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Innovations of Liangfang Sun in Semiconductor Technology
Introduction
Liangfang Sun is a notable inventor based in Suzhou, China. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and efficiency of semiconductor structures.
Latest Patents
Liangfang Sun holds a patent for a "Multi-quantum well semiconductor structure including a scandium nitride insertion layer." This innovative semiconductor structure comprises a first semiconductor layer and multiple quantum well layers formed on it. The multiple quantum well layer includes a plurality of quantum barrier layers and quantum well layers that are alternately arranged. An insertion layer is formed on each of the quantum well layers, and a second semiconductor layer is placed on top of the multiple quantum well layer. The insertion layer is made of a nitride containing a scandium component, which addresses the deterioration problem of epitaxial quantum well materials. This design introduces compressive stress on the quantum well layer below, allowing for longer light-emitting wavelengths by utilizing InGaN quantum well materials with a lower In component content.
Career Highlights
Liangfang Sun is currently associated with Enkris Semiconductor, Inc., where he continues to innovate in semiconductor technologies. His expertise and research have positioned him as a key figure in the development of advanced semiconductor structures.
Collaborations
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Conclusion
Liangfang Sun's contributions to semiconductor technology, particularly through his patented innovations, highlight his role as a leading inventor in the field. His work continues to influence advancements in semiconductor structures and applications.