The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Jul. 24, 2023
Enkris Semiconductor, Inc., Suzhou, CN;
Weihua Liu, Suzhou, CN;
Liangfang Sun, Suzhou, CN;
ENKRIS SEMICONDUCTOR, INC., Suzhou, CN;
Abstract
A semiconductor structure includes: a first semiconductor layer, a multiple quantum well layers formed on the first semiconductor layer, where the multiple quantum well layer includes a plurality of quantum barrier layers and a plurality of quantum well layers alternately arranged; an insertion layer formed on each of the plurality of quantum well layers; and a second semiconductor layer formed on the multiple quantum well layer; where a material of the insertion layer is a nitride containing a scandium component. In this application, the insertion layer, made of the nitride containing the scandium component, may repair deterioration problem of epitaxial quantum well materials. Moreover, a compressive stress on the quantum well layer located below is introduced, to achieve longer light-emitting wavelengths by using InGaN quantum well materials with a lower content of In component.