The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Jul. 05, 2023
Applicant:

Enkris Semiconductor, Inc., Suzhou, CN;

Inventors:

Liyang Zhang, Suzhou, CN;

Kai Cheng, Suzhou, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01);
U.S. Cl.
CPC ...
H10H 20/825 (2025.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01); H10H 20/812 (2025.01);
Abstract

Disclosed are a composite substrate, an epitaxial wafer, and a semiconductor device. The composite substrate includes: a support substrate layer; a first alumina layer disposed on the support substrate layer; and a sapphire substrate layer disposed on the first alumina layer. The first alumina layer may increase a bonding force between the sapphire substrate layer and the support substrate layer and release a stress between the sapphire substrate layer and the support substrate layer. Meanwhile, the existence of the first alumina layer may improve a breakdown voltage of a material without increasing a thickness of the sapphire substrate layer.


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Zhang, Liyang. (2026). Composite substrate, epitaxial wafer, and semiconductor device (U.S. Patent No. 12772617). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772617

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