The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Jul. 21, 2023
Applicant:

Enkris Semiconductor, Inc., Suzhou, CN;

Inventor:

Kai Cheng, Suzhou, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 29/14 (2025.01);
U.S. Cl.
CPC ...
H10H 29/142 (2025.01);
Abstract

A light-emitting structure includes: a first region and a second region, where the second region surrounds the first region; the first region includes a plurality of first light-emitting units, and the second region includes a plurality of second light-emitting units; and a distance between adjacent first light-emitting units is less than a distance between adjacent second light-emitting units in a circumferential direction or a radial direction of the light-emitting structure. The distance between the adjacent second light-emitting units of the second region arranged on the edge is large, which improves a doping rate of a light-emitting element in the second region, so that doping rates of the light-emitting element in the first region and the second region tend to be equal, thereby solving a problem of uneven light-emitting wavelengths in the first region and the second region when the light-emitting unit is prepared by epitaxy.


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Cheng, Kai. (2026). Light-emitting structure (U.S. Patent No. 12765148). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12765148

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