The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
May. 16, 2017
Tokyo Electron Limited, Tokyo, JP;
Takashi Kobayashi, Yamanashi, JP;
Seishi Murakami, Yamanashi, JP;
Takashi Sakuma, Yamanashi, JP;
Masahiko Tomita, Yamanashi, JP;
Takamichi Kikuchi, Yamanashi, JP;
Akitaka Shimizu, Yamanashi, JP;
Takayuki Kamaishi, Yamanashi, JP;
Einosuke Tsuda, Yamanashi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.