The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Nov. 22, 2016
Applied Materials, Inc., Santa Clara, CA (US);
Yu Lei, Foster City, CA (US);
Vikash Banthia, Mountain View, CA (US);
Kai Wu, Palo Alto, CA (US);
Xinyu Fu, Pleasanton, CA (US);
Yi Xu, San Jose, CA (US);
Kazuya Daito, Milipitas, CA (US);
Feiyue Ma, Sunnyvale, CA (US);
Pulkit Agarwal, Santa Clara, CA (US);
Chi-Chou Lin, San Jose, CA (US);
Dien-Yeh Wu, San Jose, CA (US);
Guoqiang Jian, San Jose, CA (US);
Wei V. Tang, Santa Clara, CA (US);
Jonathan Bakke, Sunnyvale, CA (US);
Mei Chang, Saratoga, CA (US);
Sundar Ramamurthy, Fremont, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.