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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9882123 B1

PDFFull Text
Date of Patent:
Jan. 30, 2018

Filed:

Oct. 24, 2016

Perpendicular spin transfer torque memory (sttm) device with enhanced stability and method to form same

Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Brian S. Doyle, Portland, OR (US);

Charles C. Kuo, Hillsboro, OR (US);

Kaan Oguz, Dublin, IE;

Uday Shah, Portland, OR (US);

Elijah V. Karpov, Santa Clara, CA (US);

Roksana Golizadeh Mojarad, San Jose, CA (US);

Mark L. Doczy, Portland, OR (US);

Robert S. Chau, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:

Schwabe Williamson & Wyatt P.C.

Primary Examiner:

Tu-Tu Ho

Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01F 10/32 (2006.01); G11C 11/18 (2006.01); H01F 10/14 (2006.01); H01F 10/16 (2006.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01F 10/193 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); G11C 11/161 (2013.01); G11C 11/18 (2013.01); H01F 10/14 (2013.01); H01F 10/16 (2013.01); H01F 10/3286 (2013.01); H01L 27/226 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01F 10/1936 (2013.01); H01F 10/329 (2013.01); H01F 10/3236 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01);
Abstract

Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and methods of fabricating perpendicular STTM devices with enhanced stability are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A free magnetic layer is disposed above the dielectric layer. A conductive oxide material layer is disposed on the free magnetic layer.

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