The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Jun. 12, 2015
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Alexander Kalnitsky, San Francisco, CA (US);
Yi-Yang Lei, Taichung, TW;
Hsi-Ching Wang, Taoyuan, TW;
Cheng-Yu Kuo, Kaohsiung, TW;
Tsung Lung Huang, Tainan, TW;
Ching-Hua Hsieh, Hsinchu, TW;
Chung-Shi Liu, Hsinchu, TW;
Chen-Hua Yu, Hsinchu, TW;
Chin-Yu Ku, Hsinchu, TW;
De-Dui Liao, Hsin-Chu, TW;
Kuo-Chio Liu, Hsinchu, TW;
Kai-Di Wu, Tainan, TW;
Kuo-Pin Chang, Tainan, TW;
Sheng-Pin Yang, Kaohsiung, TW;
Isaac Huang, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor structure, comprising: receiving a first substrate including a first surface, a second surface opposite to the first surface and a plurality of conductive bumps disposed over the first surface; receiving a second substrate; disposing an adhesive over the first substrate or the second substrate; heating the adhesive in a first ambiance; bonding the first substrate with the second substrate by applying a force of less than about 10,000N upon the first substrate or the second substrate and heating the adhesive in a second ambiance; and thinning down a thickness of the first substrate from the second surface.