The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Mar. 25, 2015
Lam Research Corporation, Fremont, CA (US);
Hu Kang, Tualatin, OR (US);
Adrien LaVoie, Newberg, OR (US);
Shankar Swaminathan, Beaverton, OR (US);
Jun Qian, Sherwood, OR (US);
Chloe Baldasseroni, Portland, OR (US);
Frank Pasquale, Tualatin, OR (US);
Andrew Duvall, Portland, OR (US);
Ted Minshall, Sherwood, OR (US);
Jennifer Petraglia, Portland, OR (US);
Karl Leeser, West Linn, OR (US);
David Smith, Lake Oswego, OR (US);
Sesha Varadarajan, Lake Oswego, OR (US);
Edward Augustyniak, Tualatin, OR (US);
Douglas Keil, West Linn, OR (US);
LAM RESEARCH CORPORATION, Fremont, CA (US);
Abstract
A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume. A plasma generator is configured to selectively generate RF plasma in the reaction volume. An edge tuning system includes a collar and a parasitic plasma reducing element that is located around the stem portion between the collar and an upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber.