The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Mar. 26, 2014
Intel Corporation, Santa Clara, CA (US);
Brian S. Doyle, Portland, OR (US);
David L. Kencke, Beavertown, OR (US);
Kaan Oguz, Beaverton, OR (US);
Mark L. Doczy, Beaverton, OR (US);
Satyarth Suri, Hillsboro, OR (US);
Robert S. Chau, Beavertown, OR (US);
Charles C. Kuo, Hillsboro, OR (US);
Roksana Golizadeh Mojarad, San Jose, CA (US);
INTEL CORPORATION, Santa Clara, CA (US);
Abstract
Techniques are disclosed for forming a spin-transfer torque memory (STTM) element having an annular contact to reduce critical current requirements. The techniques reduce critical current requirements for a given magnetic tunnel junction (MTJ), because the annular contact reduces contact size and increases local current density, thereby reducing the current needed to switch the direction of the free magnetic layer of the MTJ. In some cases, the annular contact surrounds at least a portion of an insulator layer that prevents the passage of current. In such cases, current flows through the annular contact and around the insulator layer to increase the local current density before flowing through the free magnetic layer. The insulator layer may comprise a dielectric material, and in some cases, is a tunnel material, such as magnesium oxide (MgO). In some cases, a critical current reduction of at least 10% is achieved for a given MTJ.