The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Dec. 27, 2011
Niloy Mukherjee, Beaverton, OR (US);
Gilbert Dewey, Hillsboro, OR (US);
Marko Radosavljevic, Beaverton, OR (US);
Niti Goel, Hillsboro, OR (US);
Sanaz Kabehie, Portland, OR (US);
Matthew V. Metz, Portland, OR (US);
Robert S. Chau, Beaverton, OR (US);
Niloy Mukherjee, Beaverton, OR (US);
Gilbert Dewey, Hillsboro, OR (US);
Marko Radosavljevic, Beaverton, OR (US);
Niti Goel, Hillsboro, OR (US);
Sanaz Kabehie, Portland, OR (US);
Matthew V. Metz, Portland, OR (US);
Robert S. Chau, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A die includes a semiconductive prominence and a surface-doped structure on the prominence. The surface-doped structure makes contact with contact metallization. The prominence may be a source- or drain contact for a transistor. Processes of making the surface-doped structure include wet-vapor- and implantation techniques, and include annealing techniques to drive in the surface doping to only near-surface depths in the semiconductive prominence.