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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9613854 B1

PDFFull Text
Expired
Date of Patent:
Apr. 04, 2017

Filed:

Sep. 14, 2015

Method and apparatus for back end of line semiconductor device processing

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Shin-Yi Yang, New Taipei, TW;

Hsiang-Huan Lee, Jhudong Township, TW;

Ming-Han Lee, Taipei, TW;

Ching-Fu Yeh, Hsin-Chu, TW;

Pei-Yin Liou, Zhudong Township, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Marc Armand

Assistant Examiner:

Sarah Salerno

Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76847 (2013.01); H01L 21/76829 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 21/76849 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/53276 (2013.01); H01L 23/53295 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method of forming a device may include: forming an opening through a dielectric layer and an underlying etching stop layer to expose a metal line. The method may further include the step of catalytically growing a graphene layer on an exposed surface of the metal line, and depositing an amorphous carbon layer on sidewalls of the opening. The steps of catalytically growing the graphene layer and depositing the amorphous carbon layer may be performed simultaneously.

Find Patent Forward Citations

Yang, Shin-Yi. (2017). Method and apparatus for back end of line semiconductor device processing (U.S. Patent No. 9613854). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9613854

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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